RF MEMS Technology
RF MEMS is the acronym of Radio Frequency MicroElectromechanical Systems. This switch, adapted to high frequency electronics, is presented as a mechanical membrane of several hundred micrometers long suspended over several microns from the substrate. When non-actuated, it prevents any electrical connection between the input and the output and presents a galvanic isolation (upstate). When applying a voltage on the actuation electrode, the metal beam is attracted and comes in contact with the RF output creating an ideal electric connection with the input (downstate).
RF MEMS is a breakthrough technology since it provides :
Very good isolation and very low losses over a 40 GHz wide band and more.
Due to the galvanic isolation in the upstate and the ideal electrical contact in the downstate, RF MEMS technology can reach extremely good performances over a wide frequency band compared to semi-conductors realizing the same function. This advantage allows engineers to rethink electronic architectures and upgrade performance or reduce the size of their devices.
No power consumption.
Due to the electrostatic actuation, the chip uses less than a few nanowatt of power consumption while moving and 0 Watt when static. It is a real advantage over current solutions to reduce power consumption on portable devices in order to increase battery life or decrease battery volume.
Due to the mechanical properties, multi-tone signals can be applied to the device over a wide band without any distortion. Third order Interception Point (IP3) is typically better than 65 dBm, outcompeting todays state of the art semiconductor performance.
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